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FGA25N120ANTDTU

ON FGA25N120ANTDTU

1200 V50 A4.1mJ(开),960µJ(关)-55°C ~ 150°C(TJ)TO-3P-3,SC-65-3

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FGA25N120ANTDTU
IGBT NPT/TRENCH 1200V 50A TO3P
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¥11.11

价格更新:一个月前

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产品详情

Overview

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven April 2014 Description Using Fairchild’s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. GCE TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Con

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven April 2014 Description Using Fairchild’s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. GCE TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Con

Features

Bulk Package


? Extremely Enhanced Avalanche Capability

? Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

? Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C

? NPT Trench Technology, Positive Temperature Coefficient

? Low on-state voltage drop



Through Hole Mounting Type

Applications


? Induction Heating, Microwave Oven

? SMPS

? UPS

? AC and DC motor drives offering speed control

? Chopper and inverters

? Solar inverters


产品属性
全选
包装: 散装
部件状态: 停产
IGBT 类型: NPT 和沟道
最大集电极-发射极击穿电压: 1200 V
集电极电流 (Ic)(最大值): 50 A
电流 - 集电极脉冲 (Icm): 90 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.65V @ 15V,50A
最大功率: 312 W
开关能量: 4.1mJ(开),960µJ(关)
输入类型: 标准
栅极电荷: 200 nC
25°C 时的开/关延迟时间: 50ns/190ns
测试条件: 600V,25A,10 欧姆,15V
反向恢复时间 (trr): 350 ns
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商器件封装: TO-3P
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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