ON FDZ1905PZ

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）126 毫欧 @ 1A，4.5V1V @ 250µA

Overview

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on an advanced 1.5V PowerTrench® process with state of the art ¡°low pitch¡± WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on).

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
126mOhm @ 1A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
900mW Power - Max
Surface Mount Mounting Type