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FDZ1416NZ

ON FDZ1416NZ

MOSFET(金属氧化物)2 N 沟道(双)共漏1.3V @ 250µA

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onsemi
FDZ1416NZ
MOSFET 2N-CH 4WLCSP
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¥81.60

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on an advanced PowerTrench process with state of the art “low pitch” WLCSP packaging process, the FDZ1416NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packagingtechnology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge and low rS1S2(on).

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
1.3V @ 250µA Vgs(th) (Max) @ Id
17nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
500mW Power - Max
Surface Mount Mounting Type

Applications

 

Max rS1S2(on) = 23 mΩ at VGS = 4.5 V, IS1S2 = 1 A

Max rS1S2(on) = 25 mΩ at VGS = 4 V, IS1S2 = 1 A

Max rS1S2(on) = 28 mΩ at VGS = 3.1 V, IS1S2 = 1 A

Max rS1S2(on) = 33 mΩ at VGS = 2.5 V, IS1S2 = 1 A

Occupies only 2.2 mm2 of PCB area

Ultra-thin package: less than 0.35 mm height when mounted to PCB

High power and current handling capability

HBM ESD protection level > 3.2 kV (Note 3)

RoHS Compliant


FDZ1416NZ      Applications


Mobile Handsets

Battery Management

Load Switch

Battery Protection

 

  





产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
配置: 2 N 沟道(双)共漏
漏极电流下的最大栅极阈值电压: 1.3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 17nC @ 4.5V
最大功率: 500mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 4-XFBGA,WLCSP
供应商器件封装: 4-WLCSP(1.6x1.4)
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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收入: 85M

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配件发货: 25M+

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