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FDS4895C

ON FDS4895C

MOSFET(金属氧化物)N 和 P 沟道40V5.5A,4.4A39 毫欧 @ 5.5A,10V5V @ 250µA

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FDS4895C
MOSFET N/P-CH 40V 8SOIC
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产品详情

Overview

The FDS4885C is MOSFET N/P-CH 40V 7.5A/6A 8SOIC, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-SOIC (0.154", 3.90mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-SOIC Supplier Device Package, the device can also be used as N and P-Channel FET Type. In addition, the Power Max is 900mW, the device is offered in 40V Drain to Source Voltage Vdss, the device has a 900pF @ 20V of Input Capacitance Ciss Vds, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 7.5A, 6A, and Rds On Max Id Vgs is 22 mOhm @ 7.5A, 10V, and the Vgs th Max Id is 5V @ 250μA, and Gate Charge Qg Vgs is 21nC @ 10V.

FDS4885L with circuit diagram manufactured by FSC. The FDS4885L is available in SOP-8 Package, is part of the IC Chips.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
40V Drain to Source Voltage (Vdss)
5.5A, 4.4A Current - Continuous Drain (Id) @ 25°C
39mOhm @ 5.5A, 10V Rds On (Max) @ Id, Vgs
5V @ 250µA Vgs(th) (Max) @ Id
10nC @ 10V Gate Charge (Qg) (Max) @ Vgs
410pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type
产品属性
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型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
配置: N 和 P 沟道
漏源电压(Vdss): 40V
25°C 时电流 - 连续漏极 (Id): 5.5A,4.4A
漏极电流和栅极至源极电压下的最大导通电阻: 39 毫欧 @ 5.5A,10V
漏极电流下的最大栅极阈值电压: 5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 10nC @ 10V
Vds 时的最大输入电容 (Ciss): 410pF @ 20V
最大功率: 900mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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