ON FDPC8016S

MOSFET（金属氧化物）逻辑电平门2 N 沟道（双）非对称型25V20A，35A3.8 毫欧 @ 20A，10V2.5V @ 250µA

Overview

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.

Features

Maximum RDS(on) at VGS = 10 V, ID = 35 A is 1.4 m.

? Maximum RDS(on) at VGS = 4.5 V, ID = 32 A is 1.7 m.

? Reduced Rise/Fall Times Due to Low Inductance Packaging Lead to Lower Switching Losses

? Optimal Layout for Lower Circuit Inductance and Reduced Switch Node Ringing is Made Possible by MOSFET Integration

? These devices are RoHS compliant and Pb-free.

Applications

? Computer

? Interactions

? Multi-Use Point of Load