ON FDPC8011S

MOSFET（金属氧化物）2 N 沟道（双）非对称型25V13A（Ta），20A（Tc），27A（Ta），60A（Tc）6 毫欧 @ 13A，10V，1.8 毫欧 @ 27A，10V2.2V @ 250µA，2.2V @ 1mA

Overview

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

Features

Q1 N-Channel

Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A

Q2 N-Channel

Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant

Applications

Server

Computing

Communications

General Purpose Point of Load