联系我们
中文
FDMC9430L-F085

ON FDMC9430L-F085

MOSFET(金属氧化物)2 N-通道(双)40V12A8 毫欧 @ 12A,10V3V @ 250µA

比较
onsemi
FDMC9430L-F085
MOSFET 2 N-CHANNEL 40V 12A 8MLP
paypalvisamastercarddiscover
upsdhlsf
比较

¥5.49

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The FDMC8884 is MOSFET N-CH 30V 9A POWER33, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.007055 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerWDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-MLP (3.3x3.3) of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.3W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 685pF @ 15V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 9A (Ta), 15A (Tc), and Rds On Max Id Vgs is 19 mOhm @ 9A, 10V, and the Vgs th Max Id is 2.5V @ 250μA, and Gate Charge Qg Vgs is 14nC @ 10V, and the Pd Power Dissipation is 2.3 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 2 ns, and the Rise Time is 2 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 9 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 19 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 6 ns, and the Qg Gate Charge is 5 nC 10 nC, and Channel Mode is Enhancement.

FDMC8883 with EDA / CAD Models manufactured by FAIRCHILD. The FDMC8883 is available in DFN-8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
40V Drain to Source Voltage (Vdss)
12A Current - Continuous Drain (Id) @ 25°C
8mOhm @ 12A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
22nC @ 10V Gate Charge (Qg) (Max) @ Vgs
984pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
11.4W Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
技术: MOSFET(金属氧化物)
配置: 2 N-通道(双)
漏源电压(Vdss): 40V
25°C 时电流 - 连续漏极 (Id): 12A
漏极电流和栅极至源极电压下的最大导通电阻: 8 毫欧 @ 12A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 22nC @ 10V
Vds 时的最大输入电容 (Ciss): 984pF @ 20V
最大功率: 11.4W
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-PowerWDFN
供应商器件封装: 8-WDFN(3x3)
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z