ON FDMB3900AN

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）25V7A23 毫欧 @ 7A，10V3V @ 250µA

Overview

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.

Features

Maxos(on)=23mΩatVGs=10Vb=7.0A

Maxrps(on)=33mΩat VGs=4.5Vlp=5.5A

Fast switching speed Low gate charge

High performance trench technology for extremely low rpson

High power and current handling capability

RoHS Compliant

Applications

FDMB3900AN   Applications

low-voltage

battery-powered