ON FDD3510H

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道，共漏80V4.3A，2.8A80 毫欧 @ 4.3A，10V4V @ 250µA

Overview

This P-Channel 1.8V Specified MOSFET uses a advanced low voltage PowerTrench process. It has been optimized for battery power management.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
80V Drain to Source Voltage (Vdss)
4.3A, 2.8A Current - Continuous Drain (Id) @ 25°C
80mOhm @ 4.3A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
18nC @ 10V Gate Charge (Qg) (Max) @ Vgs
800pF @ 40V Input Capacitance (Ciss) (Max) @ Vds
1.3W Power - Max
Surface Mount Mounting Type

Applications

Q1: N-Channel

Max rDS(on) = 80m? at VGS = 10V, ID = 4.3A

 Max rDS(on) = 88m? at VGS = 6V, ID = 4.1A

Q2: P-Channel

Max rDS(on) = 190m? at VGS = -10V, ID = -2.8A

Max rDS(on) = 224m? at VGS = -4.5V, ID = -2.6A

100% UIL Tested

RoHS Compliant

 

FDD3510H    Applications

Inverter

 H-Bridge