ON FDC6561AN

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V2.5A95 毫欧 @ 2.5A，10V3V @ 250µA

Overview

DescriptionThese N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Features• 2.5 A, 30 V• Rds(on) = 0.095 Ω @ Vgs = 10 V• Rds(on) = 0.145 Ω @ Vgs = 4.5 V• Very fast switching• Low gate charge (2.1nC typical• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Features

2.5 A, 30 V

RDS(ON) = 0.095 |? @ VGS = 10 V

RDS(ON) = 0.145 |? @ VGS = 4.5 V

Very fast switching

Low gate charge (2.1nC typical

SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Applications

This product is general usage and suitable for many different applications.