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FAN73933M

ON FAN73933M

半桥210V ~ 20V

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onsemi
FAN73933M
IC GATE DRVR HALF-BRIDGE 14SOP
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产品详情

Overview

The FAN73933M is a half-bridge, gate-drive IC with programmable dead-time control functions that can drive high-speed MOSFETs and IGBTs operating up to +600V. It has a buffered output stage with all NMOS transistors designed for high-pulse-current driving capability and minimum cross-conduction.Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuit prevents malfunction when VDD and VBS are lower than the specified threshold voltage. The high-current and low-output voltage drop feature makes this device suitable for diverse half- and full-bridge inverters; motor drive inverters, switching mode power supplies, induction heating, and high-power DC-DC converter applications.

Features

Tube Package
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
FAN73933M gate drivers applications.

  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
  • Portable Media Players
产品属性
全选
包装: 管件
部件状态: 停产
可编程: 未验证
驱动配置: 半桥
通道类型: 独立式
驱动器数: 2
栅极类型: IGBT,N 沟道 MOSFET
电源电压: 10V ~ 20V
逻辑低电平和高电平的电压电平: 0.8V,2.5V
电流 - 峰值输出(灌入,拉出): 2.5A,2.5A
输入类型: 非反相
最大高压侧电压(自启动): 600 V
上升/下降时间(典型值): 40ns,20ns
工作温度: -40°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商器件封装: 14-SOP
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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