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EMH2408-TL-H

ON EMH2408-TL-H

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)20V4A45 毫欧 @ 4A,4.5V

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EMH2408-TL-H
MOSFET 2N-CH 20V 4A EMH8
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¥0.97

价格更新:一个月前

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产品详情

Overview

The EMH2407-TL-H is MOSFET 2N-CH 20V 6A EMH8, that includes EMH2407 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Supplier Device Package is 8-EMH, the device is offered in 2 N-Channel (Dual) FET Type, the device has a 1.4W of Power Max, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 580pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 6A, and Rds On Max Id Vgs is 25 mOhm @ 3A, 4.5V, and the Gate Charge Qg Vgs is 6.3nC @ 4.5V, and Id Continuous Drain Current is 6 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 25 mOhms, and the Transistor Polarity is N-Channel.

EMH2407R-TL-H with EDA / CAD Models manufactured by SANYO. The EMH2407R-TL-H is available in EMH8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
4A Current - Continuous Drain (Id) @ 25°C
45mOhm @ 4A, 4.5V Rds On (Max) @ Id, Vgs
4.7nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
345pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.2W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 4A
漏极电流和栅极至源极电压下的最大导通电阻: 45 毫欧 @ 4A,4.5V
最大栅极电荷 (Qg) @ Vgs: 4.7nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 345pF @ 10V
最大功率: 1.2W
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SMD,扁平引线
供应商器件封装: 8-EMH
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