ON EMH2308-TL-E

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V3A85 毫欧 @ 3A，4.5V

Overview

EMH1-T2R with pin details manufactured by ROHM. The EMH1-T2R is available in SOT Package, is part of the Transistors (BJT) - Arrays, Pre-Biased.

EMH2 T2R with circuit diagram manufactured by ROHM. The EMH2 T2R is available in SOT-563 Package, is part of the Transistors (BJT) - Arrays, Pre-Biased.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
3A Current - Continuous Drain (Id) @ 25°C
85mOhm @ 3A, 4.5V Rds On (Max) @ Id, Vgs
4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
320pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.2W Power - Max
Surface Mount Mounting Type