ON EFC6612R-A-TF

MOSFET（金属氧化物）逻辑电平栅极，2.5V 驱动2 N 沟道（双）非对称型

Overview

EFC6611R-A-TF with pin details, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a CSP6, that offers Technology features such as Si, Number of Channels is designed to work in 1 Channel, as well as the 1 N-Channel Configuration, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 17700 ns, and the Rise Time is 570 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 27 A, and Vds Drain Source Breakdown Voltage is 12 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 3.2 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 38000 ns, and the Typical Turn On Delay Time is 80 ns, and Qg Gate Charge is 120 nC, and the Forward Transconductance Min is 19 S, and Channel Mode is Enhancement.

EFC6612R-A-TF with circuit diagram, that includes Logic Level Gate, 2.5V Drive FET Feature, they are designed to operate with a 2 N-Channel (Dual) Asymmetrical FET Type, Gate Charge Qg Vgs is shown on datasheet note for use in a 27nC @ 4.5V, that offers Mounting Type features such as Surface Mount, Package Case is designed to work in 6-SMD, No Lead, as well as the Tape & Reel (TR) Packaging, the device can also be used as 2.5W Power Max. In addition, the Supplier Device Package is 6-CSP (1.77x3.54).

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 2.5V Drive FET Feature
27nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
2.5W Power - Max
Surface Mount Mounting Type