ON EFC6601R-A-TR

MOSFET（金属氧化物）逻辑电平栅极，2.5V 驱动2 N 沟道（双）共漏

Overview

EFC6601R-A-TR with pin details, that includes EFC6601R Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.002413 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-XFBGA, as well as the Si Technology, it has an Operating Temperature range of 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 6-EFCP (2.7x1.81) Supplier Device Package, the device has a 2 N-Channel (Dual) Common Drain of FET Type, and Power Max is 2W, and the FET Feature is Logic Level Gate, 2.5V Drive, and Gate Charge Qg Vgs is 48nC @ 4.5V, and the Id Continuous Drain Current is 13 A, and Vds Drain Source Breakdown Voltage is 24 V, and the Rds On Drain Source Resistance is 11.5 mOhms, and Transistor Polarity is N-Channel.

EFC4627R-A-TR with circuit diagram, that includes 2 Channel Number of Channels, they are designed to operate with a Reel Packaging, Technology is shown on datasheet note for use in a Si, that offers Transistor Polarity features such as N-Channel, Transistor Type is designed to work in 2 N-Channel.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 2.5V Drive FET Feature
48nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
2W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type