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EFC4630R-TR

ON EFC4630R-TR

MOSFET(金属氧化物)逻辑电平栅极,2.5V 驱动2 N 沟道(双)共漏24V6A(Ta)45 毫欧 @ 3A,4.5V1.3V @ 1mA

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EFC4630R-TR
INTEGRATED CIRCUIT
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¥2.73

价格更新:一个月前

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产品详情

Overview

The EFC4621R-TR is MOSFET 2N-CH EFCP, that includes EFC4621R Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.002413 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 4-XFBGA, as well as the Si Technology, it has an Operating Temperature range of 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 4-EFCP (1.61x1.61) of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 1.6W, and the Transistor Type is 2 N-Channel, and FET Feature is Logic Level Gate, 2.5V Drive, and the Gate Charge Qg Vgs is 29nC @ 4.5V, and Pd Power Dissipation is 1.6 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 28000 ns, and Rise Time is 600 ns, and the Vgs Gate Source Voltage is 12.5 V, and Id Continuous Drain Current is 9 A, and the Vds Drain Source Breakdown Voltage is 24 V, and Rds On Drain Source Resistance is 18 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 26000 ns, and the Typical Turn On Delay Time is 340 ns, and Qg Gate Charge is 29 nC.

EFC4627R-A-TR with EDA / CAD Models, that includes Si Technology, they are designed to operate with a Reel Packaging, Transistor Polarity is shown on datasheet note for use in a N-Channel, that offers Transistor Type features such as 2 N-Channel, Number of Channels is designed to work in 2 Channel.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 2.5V Drive FET Feature
24V Drain to Source Voltage (Vdss)
6A (Ta) Current - Continuous Drain (Id) @ 25°C
45mOhm @ 3A, 4.5V Rds On (Max) @ Id, Vgs
1.3V @ 1mA Vgs(th) (Max) @ Id
7nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1.6W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平栅极,2.5V 驱动
配置: 2 N 沟道(双)共漏
漏源电压(Vdss): 24V
25°C 时电流 - 连续漏极 (Id): 6A(Ta)
漏极电流和栅极至源极电压下的最大导通电阻: 45 毫欧 @ 3A,4.5V
漏极电流下的最大栅极阈值电压: 1.3V @ 1mA
最大栅极电荷 (Qg) @ Vgs: 7nC @ 4.5V
最大功率: 1.6W
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 4-XFBGA
供应商器件封装: EFCP1313-4CC-037
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