ON EFC4618R-P-TR

MOSFET（金属氧化物）逻辑电平栅极，2.5V 驱动2 N 沟道（双）共漏

Overview

The EFC4615R-TR is MOSFET N-CH 24V 6A EFCP, that includes EFC4615R Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.002413 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in WLCSP-4, as well as the Si Technology, the device can also be used as 6 A Id Continuous Drain Current. In addition, the Vds Drain Source Breakdown Voltage is 24 V, the device is offered in 45 mOhms Rds On Drain Source Resistance, the device has a N-Channel of Transistor Polarity.

EFC4618R with circuit diagram manufactured by SANYO. The EFC4618R is available in EFCP-4P Package, is part of the FETs - Arrays.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 2.5V Drive FET Feature
25.4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1.6W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type