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ECH8651R-TL-H

ON ECH8651R-TL-H

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)24V10A14 毫欧 @ 5A,4.5V

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ECH8651R-TL-H
MOSFET 2N-CH 24V 10A ECH8
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¥1.62

价格更新:一个月前

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产品详情

Overview

The ECH8649-TL-H is MOSFET 2N-CH 20V 7.5A ECH8, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SMD, Flat Lead Package Case, it has an Operating Temperature range of 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-ECH, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 1.5W Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 1060pF @ 10V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 7.5A, and the Rds On Max Id Vgs is 17 mOhm @ 4A, 4.5V, and Gate Charge Qg Vgs is 10.8nC @ 4.5V.

ECH8649-S-TL-H with circuit diagram manufactured by SANYO. The ECH8649-S-TL-H is available in ech8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
24V Drain to Source Voltage (Vdss)
10A Current - Continuous Drain (Id) @ 25°C
14mOhm @ 5A, 4.5V Rds On (Max) @ Id, Vgs
24nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 24V
25°C 时电流 - 连续漏极 (Id): 10A
漏极电流和栅极至源极电压下的最大导通电阻: 14 毫欧 @ 5A,4.5V
最大栅极电荷 (Qg) @ Vgs: 24nC @ 10V
最大功率: 1.5W
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SMD,扁平引线
供应商器件封装: 8-ECH
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