ON BAS40-06LT1G

1 对共阳极40 V

Overview

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

• Continuous reverse voltage: max. 125 V• Repetitive peak forward current: max. 625 mA• Low reverse current: max. 1 nA• Switching time: typ. 1.5 µs.

Features

Tape & Reel (TR) Package
1V forward voltage
a maximum output voltage of 0.06A
5pF farads
a peak voltage of 1μA
a reverse voltage peak of 1μA

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
BAS40-06LT1G applications of rectifier diode array.

• Rectifier for drives applications
• Crowbar applications
• Rectifiers for UBS
• Battery chargers
• Rectifiers in switch mode power supplies (SMPS)
• Free wheeling diode in low voltage converters
• General Rectification