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AFGHL30T65RQDN

ON AFGHL30T65RQDN

650 V42 A340µJ(开),320µJ(关)-55°C ~ 175°C(TJ)TO-247-3

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AFGHL30T65RQDN
650V/30A FS4 SCR IGBT T0247-3L A
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¥33.03

价格更新:一个月前

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产品详情

Overview

The 128KXM6R3MLQ is CAP ALUM 1200UF 20% 6.3V T/H, that includes KXM Series, they are designed to operate with a Bulk Packaging, Voltage Rating is shown on datasheet note for use in a 6.3V, that offers Package Case features such as Radial, Can, Capacitance is designed to work in 1200μF, as well as the 144 mOhm Impedance, it has an Operating Temperature range of -55°C ~ 105°C. In addition, the Mounting Type is Through Hole, the device is offered in 0.394" Dia (10.00mm) Size Dimension, the device has a General Purpose of Applications, and Tolerance is ±20%, and the Polarization is Polar, and Ripple Current is 1.43A, and the Lead Spacing is 0.197" (5.00mm), and ESR Equivalent Series Resistance is 303.9 mOhm @ 120Hz, and the Lifetime Temp# is 4000 Hrs @ 105°C, and Height Seated Max is 0.650" (16.50mm).

128L18B with EDA / CAD Models manufactured by INTEL. The 128L18B is available in BGA Package, is part of the IC Chips.

Features

Tube Package
Field Stop IGBT Type
650 V Voltage - Collector Emitter Breakdown (Max)
42 A Current - Collector (Ic) (Max)
120 A Current - Collector Pulsed (Icm)
1.82V @ 15V, 30A Vce(on) (Max) @ Vge, Ic
230.8 W Power - Max
340µJ (on), 320µJ (off) Switching Energy
Standard Input Type
37 nC Gate Charge
18ns/68ns Td (on/off) @ 25°C
400V, 15A, 2.5Ohm, 15V Test Condition
39 ns Reverse Recovery Time (trr)
Through Hole Mounting Type
产品属性
全选
型号系列: Automotive, AEC-Q101
包装: 管件
部件状态: 在售
IGBT 类型: 场截止
最大集电极-发射极击穿电压: 650 V
集电极电流 (Ic)(最大值): 42 A
电流 - 集电极脉冲 (Icm): 120 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 1.82V @ 15V,30A
最大功率: 230.8 W
开关能量: 340µJ(开),320µJ(关)
输入类型: 标准
栅极电荷: 37 nC
25°C 时的开/关延迟时间: 18ns/68ns
测试条件: 400V,15A,2.5 欧姆,15V
反向恢复时间 (trr): 39 ns
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247-3
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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