ON 4N38M

1有基极的晶体管-40°C ~ 100°C

Overview

General Description The 4N38M, H11DXM and MOC8204M are photo transistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Applications ■Power supply regulators ■Digital logic inputs ■Microprocessor inputs ■Appliance sensor systems ■Industrial controls

Features

Tube Package
1 Number of Channels
4170Vrms Voltage - Isolation
20% @ 10mA Current Transfer Ratio (Min)
5µs, 5µs Turn On / Turn Off Time (Typ)
DC Input Type
Transistor with Base Output Type
80V Voltage - Output (Max)
100mA Current - Output / Channel
1.15V Voltage - Forward (Vf) (Typ)
80 mA Current - DC Forward (If) (Max)
1V Vce Saturation (Max)
Through Hole Mounting Type