ON 4N35W

1有基极的晶体管-55°C ~ 100°C

Overview

The 4N35VM is OPTOISO 4.17KV TRANS W/BASE 6DIP, that includes Tube Packaging, they are designed to operate with a 0.030159 oz Unit Weight, Package Case is shown on datasheet note for use in a 6-DIP (0.300", 7.62mm), that offers Input Type features such as DC, it has an Operating Temperature range of -40°C ~ 100°C, as well as the Through Hole Mounting Type, the device can also be used as Transistor with Base Output Type. In addition, the Number of Channels is 1, the device is offered in 6-DIP Supplier Device Package, the device has a 1 Channel of Configuration, and Voltage Output Max is 30V, and the Current DC Forward If Max is 60mA, and Voltage Isolation is 4170Vrms, and the Voltage Forward Vf Typ is 1.18V, and Current Transfer Ratio Min is 100% @ 10mA, and the Turn On Turn Off Time Typ is 2μs, 2μs, and Vce Saturation Max is 300mV, and the Pd Power Dissipation is 150 mW, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, and Vf Forward Voltage is 1.5 V, and the Isolation Voltage is 7500 Vrms, and Vr Reverse Voltage is 6 V, and the If Forward Current is 60 mA, and Maximum Collector Emitter Voltage is 30 V, and the Maximum Collector Emitter Saturation Voltage is 0.3 V.

4N35V with circuit diagram manufactured by VISH. The 4N35V is available in DIP Package, is part of the Optoisolators - Transistor, Photovoltaic Output.

Features

Tube Package
1 Number of Channels
5300Vrms Voltage - Isolation
100% @ 10mA Current Transfer Ratio (Min)
2µs, 2µs Turn On / Turn Off Time (Typ)
DC Input Type
Transistor with Base Output Type
30V Voltage - Output (Max)
1.18V Voltage - Forward (Vf) (Typ)
100 mA Current - DC Forward (If) (Max)
300mV Vce Saturation (Max)
Through Hole Mounting Type