ON 2SC5888

NPN10 A50 V

Overview

1. Adoption of MBIT processes. 2. Large current capacitance. 3. Low collector-to-emitter saturation voltage. 4. High-speed switching.

1. Collector-to-Base Voltage : VCBO = 60 V 2. Collector-to-Emitter Voltage : VCEO = 50 V 3. Emitter-to-Base Voltage : VEBO = 6 V 4. Collector Current : IC = 10 A 5. Collector Current (Pulse) : ICP = 13 A 6. Base Current : IB = 2 A 7. Collector Dissipation : PC = 2 W

Features

Bag Package
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 360mV @ 250mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

Through Hole Mounting Type

Applications

There are a lot of ON Semiconductor
2SC5888 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting