
¥1.03
价格更新:一个月前博斯克质量保证







Overview
The 2N6491G is TRANS PNP 80V 15A TO220AB, that includes 2N6491 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Through Hole Mounting Type, the device can also be used as TO-220AB Supplier Device Package. In addition, the Configuration is Single, the device is offered in 1.8W Power Max, the device has a PNP of Transistor Type, and Current Collector Ic Max is 15A, and the Voltage Collector Emitter Breakdown Max is 80V, and DC Current Gain hFE Min Ic Vce is 20 @ 5A, 4V, and the Vce Saturation Max Ib Ic is 3.5V @ 5A, 15A, and Current Collector Cutoff Max is 1mA, and the Frequency Transition is 5MHz, and Pd Power Dissipation is 75 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and the Collector Emitter Voltage VCEO Max is 80 V, and Transistor Polarity is PNP, and the Collector Emitter Saturation Voltage is 3.5 V, and Collector Base Voltage VCBO is 90 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 15 A, and the Gain Bandwidth Product fT is 5 MHz, and Continuous Collector Current is 15 A, and the DC Collector Base Gain hfe Min is 20.
The 2N6490G is Bipolar Transistors - BJT 15A 60V 75W PNP, that includes 70 V Collector Base Voltage VCBO, they are designed to operate with a 3.5 V Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 60 V, that offers Configuration features such as Single, Continuous Collector Current is designed to work in 15 A, as well as the 20 DC Collector Base Gain hfe Min, the device can also be used as 5 V Emitter Base Voltage VEBO. In addition, the Gain Bandwidth Product fT is 5 MHz, the device is offered in 15 A Maximum DC Collector Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and the Mounting Style is Through Hole, and Package Case is TO-220-3, and the Packaging is Tube, and Pd Power Dissipation is 75 W, and the Series is 2N6490, and Transistor Polarity is PNP, and the Unit Weight is 0.211644 oz.
Features
Tube Packagethe DC current gain for this device is 10 @ 2.5A 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 2A, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 5MHz
Through Hole Mounting Type
Applications
There are a lot of ON Semiconductor
2N6497 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
- 起步价为$40,南非、巴西、印度、巴基斯坦、以色列等国家的价格会有所变动,详情请咨询相关客服人员。
- 包裹重量≤0.5kg的基本运费根据时区和国家而定。
- 我们的产品目前使用DHL,顺丰和UPS运输。如果数量少,则选择联邦快递。
- 一旦发货,预期交货时间跟选择的运输方式有所变动。
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onsemi
onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。
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