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2N5460

ON 2N5460

40 VTO-226-3,TO-92-3 长体

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onsemi
2N5460
JFET P-CH 40V TO92
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¥0.62

价格更新:一个月前

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产品详情

Overview

2N5459_D27Z with pin details, that includes Tape & Reel (TR) Packaging, they are designed to operate with a TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as TO-92-3, FET Type is designed to work in N-Channel, as well as the 625mW Power Max, the device can also be used as 25V Voltage Breakdown V BRGSS. In addition, the Current Drain Idss Vds Vgs=0 is 4mA @ 15V, the device is offered in 2V @ 10nA Voltage Cutoff VGS off Id, the device has a 7pF @ 15V of Input Capacitance Ciss Vds.

2N5459_D75Z with circuit diagram, that includes 4mA @ 15V Current Drain Idss Vds Vgs=0, they are designed to operate with a N-Channel FET Type, Input Capacitance Ciss Vds is shown on datasheet note for use in a 7pF @ 15V, that offers Mounting Type features such as Through Hole, Package Case is designed to work in TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), as well as the Tape & Box (TB) Packaging, the device can also be used as 625mW Power Max. In addition, the Supplier Device Package is TO-92-3, the device is offered in 25V Voltage Breakdown V BRGSS, the device has a 2V @ 10nA of Voltage Cutoff VGS off Id.

Features

Bulk Package
40 V Voltage - Breakdown (V(BR)GSS)
1 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
750 mV @ 1 µA Voltage - Cutoff (VGS off) @ Id
7pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
350 mW Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 停产
FET 类型: P 通道
击穿电压(栅极-源极-源极): 40 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 1 mA @ 15 V
栅极-源极关态电压和漏极电流时的截止电压: 750 mV @ 1 µA
Vds 时的最大输入电容 (Ciss): 7pF @ 15V
最大功率: 350 mW
工作温度: -65°C ~ 135°C(TJ)
安装类型: 通孔
封装/外壳: TO-226-3,TO-92-3 长体
供应商器件封装: TO-92(TO-226)
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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