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MT41K2G4TRF-125:E

Micron MT41K2G4TRF-125:E

2G x 413.5 ns0°C ~ 95°C(TC)

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MT41K2G4TRF-125:E
IC DRAM 8GBIT PARALLEL 78FBGA
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产品详情

Overview

The MT41K2G4TRF-107:E TR is IC DDR3 SDRAM 8GBIT 933MHZ TFBGA, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 78-TFBGA Package Case, it has an Operating Temperature range of 0°C ~ 95°C (TC), that offers Interface features such as Parallel, Voltage Supply is designed to work in 1.283 V ~ 1.45 V, as well as the 78-FBGA (9.5x11.5) Supplier Device Package, the device can also be used as 8G (2G x 4) Memory Size. In addition, the Memory Type is DDR3L SDRAM, the device is offered in 933MHz Speed, the device has a RAM of Format Memory.

The MT41K2G4TRF-125:E is IC DDR3 SDRAM 8GBIT 800MHZ FBGA, that includes RAM Format Memory, they are designed to operate with a Parallel Interface, Memory Size is shown on datasheet note for use in a 8G (2G x 4), that offers Memory Type features such as DDR3L SDRAM, it has an Operating Temperature range of 0°C ~ 95°C (TC), as well as the 78-TFBGA Package Case, the device can also be used as Tray Packaging. In addition, the Speed is 800MHz, the device is offered in 78-FBGA (9.5x11.5) Supplier Device Package, the device has a 1.283 V ~ 1.45 V of Voltage Supply.

Features

Tray Package
Volatile Memory Type
DRAM Memory Format
8Gbit Memory Size
2G x 4 Memory Organization
Parallel Memory Interface
800 MHz Clock Frequency
13.5 ns Access Time
1.283V ~ 1.45V Voltage - Supply
0°C ~ 95°C (TC) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 托盘
部件状态: 停产
可编程: 未验证
存储器类型: 易失
存储器格式: DRAM
技术: SDRAM - DDR3L
存储容量: 8Gb
存储器组织: 2G x 4
存储器接口: 并联
时钟频率: 800 MHz
访问时间: 13.5 ns
电源电压: 1.283V ~ 1.45V
工作温度: 0°C ~ 95°C(TC)
安装类型: 表面贴装型
封装/外壳: 78-TFBGA
供应商器件封装: 78-FBGA(9.5x11.5)
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.是一家全球领先的内存和存储解决方案供应商,成立于1978年,总部位于美国爱达荷州博伊西。Micron的产品广泛应用于计算机、移动设备、数据中心、汽车和工业市场。

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