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MT41K256M16HA-125 XIT:E

Micron MT41K256M16HA-125 XIT:E

256M x 1613.75 ns-40°C ~ 95°C(TC)

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MT41K256M16HA-125 XIT:E
IC DRAM 4GBIT PARALLEL 96FBGA
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¥10.60

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The MT41K256M16HA-125 XIT:E is IC DDR3 SDRAM 4GBIT FBGA, that includes * Alternate Packaging Packaging, it has an Operating Temperature range of -40°C ~ 95°C (TC), Interface is shown on datasheet note for use in a Parallel, that offers Voltage Supply features such as 1.283 V ~ 1.45 V, Memory Size is designed to work in 4G (256M x16), as well as the DDR3L SDRAM Memory Type, the device can also be used as 800MHz Speed. In addition, the Format Memory is RAM.

The MT41K256M16HA-125 V:E TR is IC DDR3 SDRAM 4GBIT FBGA, that includes RAM Format Memory, they are designed to operate with a Parallel Interface, Memory Size is shown on datasheet note for use in a 4G (256M x16), that offers Memory Type features such as DDR3L SDRAM, it has an Operating Temperature range of 0°C ~ 95°C (TC), as well as the * Alternate Packaging Packaging, the device can also be used as 800MHz Speed. In addition, the Voltage Supply is 1.283 V ~ 1.45 V.

Features

Tray Package
Volatile Memory Type
DRAM Memory Format
4Gbit Memory Size
256M x 16 Memory Organization
Parallel Memory Interface
800 MHz Clock Frequency
13.75 ns Access Time
1.283V ~ 1.45V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
包装: 托盘
部件状态: 停产
可编程: 未验证
存储器类型: 易失
存储器格式: DRAM
技术: SDRAM - DDR3L
存储容量: 4Gb
存储器组织: 256M x 16
存储器接口: 并联
时钟频率: 800 MHz
访问时间: 13.75 ns
电源电压: 1.283V ~ 1.45V
工作温度: -40°C ~ 95°C(TC)
安装类型: 表面贴装型
封装/外壳: 96-TFBGA
供应商器件封装: 96-FBGA(9x14)
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.是一家全球领先的内存和存储解决方案供应商,成立于1978年,总部位于美国爱达荷州博伊西。Micron的产品广泛应用于计算机、移动设备、数据中心、汽车和工业市场。

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