MACOM MA4PBL027

PIN - 单90V100 mA30pF @ 5V, 10GHz4.9Ohm @ 20mA, 10GHz150 mW175°C（TJ）

Overview

The MA4PBL027 is a silicon beamlead PIN diode fabricated with MACOM's HMIC™ process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulatedwith silicon nitride and also has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the diode junction and air-bridge during handling andassembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed.The ultra low capacitance, low RC product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolationare required. The low bias levels of +10 mA in thelow loss state and 0v in the isolation state allows the use of a simple + 5V TTL gate driver. These diodescan be used as switching arrays on radar systems,high speed ECM circuits, optical switching networks,instrumentation, and other wideband multi-throwswitch assemblies.

Features

Bulk Package
A resistance of 4.9Ohm

175°C (TJ) Operating Temperature

Applications

There are a lot of M/A-Com Technology Solutions
MA4PBL027 applications of RF diodes.

• Wearables
• Smart metering
• Set top boxes
• RF attenuators and switches
• Low-loss, high-power limiters
• Receiver protectors
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection