IR AUIRFR2905Z

N 通道55 V42A（Tc）4V @ 250µA110W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Features

HEXFET® Series
Bulk Package
MOSFET (Metal Oxide) Technology
55 V Drain to Source Voltage (Vdss)
42A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
14.5mOhm @ 36A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
44 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1380 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
110W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type