Intersil RFD16N05LSM

N 通道50 V16A（Tc）2V @ 250mA60W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

Features

16A, 50V

rDS(ON)= 0.047Ω

UIS SOA Rating Curve (Single Pulse)

Design Optimized for 5V Gate Drives

Can be Driven Directly from CMOS, NMOS, TTL Circuits

SOA is Power Dissipation Limited

Nanosecond Switching Speeds

Linear Transfer Characteristics

High Input Impedance

Majority Carrier Devicee

Related Literature

?- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Applications

AC-DC Merchant Power Supply - Servers & Workstations

Workstation

Server & Mainframe