Fairchild FDP5680

N 通道60 V40A（Tc）4V @ 250µA65W（Tc）-65°C ~ 175°C（TJ）通孔

Overview

The FDP55N06 is MOSFET N-CH 60V 55A TO-220, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 114 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 95 ns, and Rise Time is 130 ns, and the Vgs Gate Source Voltage is 25 V, and Id Continuous Drain Current is 55 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 22 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 70 ns, and the Typical Turn On Delay Time is 30 ns, and Forward Transconductance Min is 33 S, and the Channel Mode is Enhancement.

The FDP5645 is MOSFET N-CH 60V 80A TO-220 manufactured by FAIRCHILD. The FDP5645 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 80A TO-220, N-Channel 60V 80A (Ta) 125W (Tc) Through Hole TO-220-3.

Features

• Low RDS (on)

• Low gate charge

• Low on-state resistance

• Superior switching performance

• Available in the TO-220 package

Applications

• DC/DC converters

• Synchronous rectification

• Uninterruptible power supplies