
Fairchild FDP023N08B
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¥49.50
价格更新:一个月前博斯克质量保证







Overview
FDP020N06B_F102 with pin details, that includes PowerTrenchR Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.063493 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-220-3 of Supplier Device Package, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 333W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 60V, and Input Capacitance Ciss Vds is 20930pF @ 30V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 120A (Tc), and the Rds On Max Id Vgs is 2 mOhm @ 100A, 10V, and Vgs th Max Id is 4.5V @ 250μA, and the Gate Charge Qg Vgs is 268nC @ 10V, and Pd Power Dissipation is 333 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Id Continuous Drain Current is 313 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 1.65 mOhms, and Transistor Polarity is N-Channel.
The FDP020N06B is MOSFET N-CH 60V 120A TO-220-3 manufactured by FAIRCHILD. The FDP020N06B is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 120A TO-220-3.
Features
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Fairchild Semiconductor
Fairchild Semiconductor是一家领先的半导体公司,成立于1957年,总部位于美国加利福尼亚州圣何塞。公司专注于电源管理和模拟半导体解决方案,2016年被ON Semiconductor收购。
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