Fairchild FDMS7670

N 通道30 V21A（Ta），42A（Tc）3V @ 250µA2.5W（Ta），62W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

• Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A

• Max rDS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17

• Advanced Package and Silicon design for low rDS(on) and high efficiency

• Next-generation enhanced body diode technology, engineered for soft recovery.  Provides  Schottky-like performance with minimum EMI in sync buck converter applications.

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Applications

• IMVP Vcore Switching for Notebook

• VRM Vcore Switching for Desktop and Server

• OringFET 1 Load Switch

• DC-DC Conversion