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W29N01HWDINF

Winbond W29N01HWDINF

128M×825纳秒-40°C ~ 85°C (TA)

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W29N01HWDINF
IC FLASH 1GBIT PARALLEL 48VFBGA
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价格更新:一个月前

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产品详情

Overview

W29N01HVDINA with pin details, that includes Tray Packaging, they are designed to operate with a 48-VFBGA Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA), that offers Interface features such as Parallel, Voltage Supply is designed to work in 2.7 V ~ 3.6 V, as well as the 48-VFBGA (8x6.5) Supplier Device Package, the device can also be used as 1G (128M x 8) Memory Size. In addition, the Memory Type is FLASH - NAND (SLC), the device is offered in 25ns Speed, the device has a FLASH of Format Memory.

W29N01HVBINF with circuit diagram, that includes FLASH Format Memory, they are designed to operate with a Parallel Interface, Memory Size is shown on datasheet note for use in a 1G (128M x 8), that offers Memory Type features such as FLASH - NAND (SLC), it has an Operating Temperature range of -40°C ~ 85°C (TA), as well as the 63-VFBGA Package Case, the device can also be used as Tray Packaging. In addition, the Speed is 25ns, the device is offered in 63-VFBGA (9x11) Supplier Device Package, the device has a 2.7 V ~ 3.6 V of Voltage Supply.

Features

Tray Package
FLASH Memory Format
1Gbit Memory Size
128M x 8 Memory Organization
Parallel Memory Interface
25ns Write Cycle Time - Word, Page
25 ns Access Time
1.7V ~ 1.95V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
包装: 托盘
部件状态: 在售
可编程: 未经审核的
存储器类型: 非挥发性
存储器格式: 闪光
技术: 闪存 - NAND (SLC)
存储容量: 1Gbit
存储器组织: 128M×8
存储器接口: 平行线
单词、页面的写入周期时间: 25纳秒
访问时间: 25纳秒
电源电压: 1.7V~1.95V
工作温度: -40°C ~ 85°C (TA)
安装类型: 表面贴装
封装/外壳: 48-VFBGA
供应商器件封装: 48-VFBGA (8x6.5)
Winbond Electronics

Winbond Electronics

Winbond Electronics是一家全球知名的半导体公司,专注于存储器解决方案的设计和制造。公司成立于1987年,总部位于台湾新竹科学园区。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

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