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W25N01GWTBIT TR

Winbond W25N01GWTBIT TR

128M×88纳秒-40°C ~ 85°C (TA)

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W25N01GWTBIT TR
IC FLASH 1GBIT SPI/QUAD 24TFBGA
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价格更新:一个月前

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产品详情

Overview

W25M512JVFIQ TR with pin details, that includes SpiFlashR Series, they are designed to operate with a Tape & Reel (TR) Alternate Packaging Packaging, Package Case is shown on datasheet note for use in a 16-SOIC (0.295", 7.50mm Width), it has an Operating Temperature range of -40°C ~ 85°C (TA), Interface is designed to work in SPI Serial, as well as the 2.7 V ~ 3.6 V Voltage Supply, the device can also be used as 16-SOIC Supplier Device Package. In addition, the Memory Size is 512M (64M x 8), the device is offered in FLASH - NOR Memory Type, the device has a 104MHz of Speed, and Format Memory is FLASH.

The W25N01GVZEIG is NAND Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 1G-bit 128M x 8 7ns 8-Pin WSON EP Tube manufactured by WINBOND. The W25N01GVZEIG is available in WSON8 Package, is part of the IC Chips, , and with support for NAND Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 1G-bit 128M x 8 7ns 8-Pin WSON EP Tube.

Features

SpiFlash® Series
Tape & Reel (TR) Package
FLASH Memory Format
1Gbit Memory Size
128M x 8 Memory Organization
104 MHz Clock Frequency
700µs Write Cycle Time - Word, Page
8 ns Access Time
1.7V ~ 1.95V Voltage - Supply
Surface Mount Mounting Type
产品属性
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型号系列: SpiFlash®
包装: 磁带
部件状态: 在售
可编程: 未经审核的
存储器类型: 非挥发性
存储器格式: 闪光
技术: 闪存 - NAND (SLC)
存储容量: 1Gbit
存储器组织: 128M×8
存储器接口: SPI - 四路 I/O
时钟频率: 104兆赫
单词、页面的写入周期时间: 700微秒
访问时间: 8纳秒
电源电压: 1.7V~1.95V
工作温度: -40°C ~ 85°C (TA)
安装类型: 表面贴装
封装/外壳: 24-TBGA
供应商器件封装: 24-TFBGA (8x6)
Winbond Electronics

Winbond Electronics

Winbond Electronics是一家全球知名的半导体公司,专注于存储器解决方案的设计和制造。公司成立于1987年,总部位于台湾新竹科学园区。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

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