Vishay Siliconix 2N4857JAN02

TO-206AA，TO-18-3 金属罐

Overview

The 2N4857A is JFET Leaded JFET, that includes 2N4857 Series, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-18, Configuration is designed to work in Single, as well as the 360 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 40 V Vds Drain Source Breakdown Voltage, the device has a 40 Ohms of Rds On Drain Source Resistance, and Transistor Polarity is N-Channel, and the Vgs Gate Source Breakdown Voltage is 40 V, and Drain to Source Voltage Vdss is 20 mA to 100 mA, and the Gate Source Cutoff Voltage is 2 V to 6 V, and Maximum Drain Gate Voltage is 40 V.

2N4856UB with circuit diagram manufactured by Microsemi. is part of the JFETs (Junction Field Effect), , and with support for JFET N Channel Jfet, JFET.

Features