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2N4339-2

Vishay Siliconix 2N4339-2

50 VTO-206AA,TO-18-3 金属罐

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2N4339-2
JFET N-CH 50V TO206AA
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价格更新:一个月前

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产品详情

Overview

1N4305_T50R with pin details, that includes Tape & Reel (TR) Packaging, they are designed to operate with a DO-204AH, DO-35, Axial Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as DO-35, Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Standard Diode Type, the device can also be used as 100nA @ 50V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 850mV @ 10mA, the device is offered in 75V Voltage DC Reverse Vr Max, the device has a 300mA of Current Average Rectified Io, and Reverse Recovery Time trr is 4ns, and the Capacitance Vr F is 2pF @ 0V, 1MHz, it has an Operating Temperature Junction range of 175°C (Max).

1N4305-1 with EDA / CAD Models, that includes Bulk Packaging.

Features

Bulk Package
50 V Voltage - Breakdown (V(BR)GSS)
500 µA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
600 mV @ 100 nA Voltage - Cutoff (VGS off) @ Id
7pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
300 mW Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 停产
FET 类型: N 通道
击穿电压(栅极-源极-源极): 50 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 500 µA @ 15 V
栅极-源极关态电压和漏极电流时的截止电压: 600 mV @ 100 nA
Vds 时的最大输入电容 (Ciss): 7pF @ 15V
最大功率: 300 mW
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-206AA,TO-18-3 金属罐
供应商器件封装: TO-206AA(TO-18)
Vishay Siliconix

Vishay Siliconix

Vishay Siliconix是一家领先的电源半导体制造商,专注于开发提高电源管理电路效率的产品。公司成立于1962年,总部位于美国加利福尼亚州圣何塞。1998年,Vishay收购了Siliconix的80%股份,并在2005年收购了剩余股份。

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