Vishay Siliconix 2N4119A-E3

40 VTO-206AF，TO-72-4 金属罐

Overview

The 2N4119A is MOSFET N-CH 40V 200UA TO-206AF, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-206AF, TO-72-4 Metal Can, that offers Technology features such as Si, Mounting Type is designed to work in Through Hole, as well as the TO-206AF (TO-72) Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is N-Channel, the device is offered in 300mW Power Max, the device has a 40V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 200μA @ 10V, and the Voltage Cutoff VGS off Id is 2V @ 1nA, and Input Capacitance Ciss Vds is 3pF @ 10V, and the Pd Power Dissipation is 300 mW, and Id Continuous Drain Current is 1 nA, and the Vds Drain Source Breakdown Voltage is 10 V, and Transistor Polarity is N-Channel, and the Forward Transconductance Min is 100 uS, and Vgs Gate Source Breakdown Voltage is - 40 V, and the Gate Source Cutoff Voltage is - 6 V.

The 2N4118A-E3 is MOSFET N-CH 40V 80UA TO-206AF, that includes 80μA @ 10V Current Drain Idss Vds Vgs=0, they are designed to operate with a N-Channel FET Type, Input Capacitance Ciss Vds is shown on datasheet note for use in a 3pF @ 10V, that offers Mounting Type features such as Through Hole, Package Case is designed to work in TO-206AF, TO-72-4 Metal Can, as well as the Bulk Packaging, the device can also be used as 300mW Power Max. In addition, the Supplier Device Package is TO-206AF (TO-72), the device is offered in 40V Voltage Breakdown V BRGSS, the device has a 1V @ 1nA of Voltage Cutoff VGS off Id.

Features

Bulk Package
40 V Voltage - Breakdown (V(BR)GSS)
200 µA @ 10 V Current - Drain (Idss) @ Vds (Vgs=0)
2 V @ 1 nA Voltage - Cutoff (VGS off) @ Id
3pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
300 mW Power - Max
Through Hole Mounting Type