Vishay Siliconix 2N4117A-2

40 VTO-206AF，TO-72-4 金属罐

Overview

The 2N4117 is JFET N-Channel Silicon JFET-Transistor, that includes Through Hole Mounting Style, they are designed to operate with a TO-72-3 Package Case, Technology is shown on datasheet note for use in a Si, that offers Configuration features such as Single, Pd Power Dissipation is designed to work in 300 mW, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 55 C. In addition, the Id Continuous Drain Current is 50 mA, the device is offered in - 40 V Vds Drain Source Breakdown Voltage, the device has a N-Channel of Transistor Polarity, and Forward Transconductance Min is 70 uS, and the Vgs Gate Source Breakdown Voltage is - 40 V, and Drain to Source Voltage Vdss is 90 uA, and the Gate Source Cutoff Voltage is - 1.8 V, and Maximum Drain Gate Voltage is - 40 V.

2N4093UB with circuit diagram manufactured by Microsemi. is part of the JFETs (Junction Field Effect), , and with support for JFET N Channel Jfet, JFET N-Channel 40V 360mW Surface Mount 3-UB (3.09x2.45).

Features

Bulk Package
40 V Voltage - Breakdown (V(BR)GSS)
30 µA @ 10 V Current - Drain (Idss) @ Vds (Vgs=0)
600 mV @ 1 nA Voltage - Cutoff (VGS off) @ Id
3pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
300 mW Power - Max
Through Hole Mounting Type