Vishay Semiconductor Opto Division TCET1108G

1晶体管-40°C ~ 100°C

Overview

The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.• UL1577, file no. E52744, double protection• cUL tested, file A52744• BSI: EN 60065:2002, EN 60950:2000• DIN EN 60747-5-5 (VDE 0884)• FIMKO• High common mode rejection• Low temperature coefficient of CTR• CTR offered in 9 groups• Reinforced isolation provides circuit protection against electrical shock (safety class II)• Isolation materials according to UL 94 V-O• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)• Climatic classification 55/100/21 (IEC 60068 part 1)• Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS• Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/ECCircuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):• for appl. class I - IV at mains voltage ≤ 300 V• for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for:- Switch-mode power supplies- Line receiver- Computer peripheral interface- Microprocessor system interface

Features

Tube Package
1 Number of Channels
5000Vrms Voltage - Isolation
130% @ 5mA Current Transfer Ratio (Min)
260% @ 5mA Current Transfer Ratio (Max)
6µs, 5µs Turn On / Turn Off Time (Typ)
3µs, 4.7µs Rise / Fall Time (Typ)
DC Input Type
Transistor Output Type
70V Voltage - Output (Max)
50mA Current - Output / Channel
1.25V Voltage - Forward (Vf) (Typ)
60 mA Current - DC Forward (If) (Max)
300mV Vce Saturation (Max)
Through Hole Mounting Type