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BPW85B

Vishay Semiconductor Opto Division BPW85B

850nm50°通孔

比较
BPW85B
PHOTOTRANSISTOR 450 TO 1080 NM
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比较

¥1.28

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The BPW85 is PHOTOTRANSISTOR NPN 3MM CLEAR, that includes Phototransistors Product, they are designed to operate with a Phototransistor Type, Packaging is shown on datasheet note for use in a Bulk, that offers Package Case features such as Radial, it has an Operating Temperature range of -40°C ~ 100°C (TA), as well as the Through Hole Mounting Type, the device can also be used as 150mW Power Max. In addition, the Current Collector Ic Max is 50mA, the device is offered in 70V Voltage Collector Emitter Breakdown Max, the device has a Top View of Orientation, and Wavelength is 850nm, and the Current Dark Id Max is 200nA, and Viewing Angle is 50°, and the Pd Power Dissipation is 100 mW, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, and Collector Emitter Voltage VCEO Max is 70 V, and the Fall Time is 2.3 us, and Rise Time is 2 us, and the Collector Emitter Saturation Voltage is 0.3 V, and Dark Current is 200 nA, and the Maximum On State Collector Current is 50 mA, and Collector Emitter Breakdown Voltage is 70 V, and the Light Current is 0.8 mA.

The BPW83 is PHOTODIODE PIN FLAT SIDE VIEW, that includes 2 nA Dark Current, they are designed to operate with a 100 ns Fall Time, Half Intensity Angle Degrees is shown on datasheet note for use in a 65 deg, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, as well as the Through Hole Mounting Style, the device can also be used as 4E-14 W/sqrt Hz Noise Equivalent Power NEP. In addition, the Packaging is Bulk, the device is offered in 215 mW Pd Power Dissipation, the device has a 950 nm of Peak Wavelength, and Photocurrent is 45 uA, and the Product is PIN Photodiodes, and Rise Time is 100 ns, and the Vr Reverse Voltage is 60 V.

Features

Bulk Package
70 V Voltage - Collector Emitter Breakdown (Max)
100 mA Current - Collector (Ic) (Max)
200 nA Current - Dark (Id) (Max)
850nm Wavelength
50° Viewing Angle
100 mW Power - Max
Through Hole Mounting Type
Top View Orientation
Radial Package / Case
产品属性
全选
包装: 散装
部件状态: 在售
最大集电极-发射极击穿电压: 70 V
集电极电流 (Ic)(最大值): 100 mA
电流 - 暗(Id)(最大值): 200 nA
波长: 850nm
视角: 50°
最大功率: 100 mW
安装类型: 通孔
定向: 顶视图
工作温度: -40°C ~ 100°C(TA)
包装 / 盒: 径向
Vishay Semiconductor Opto Division

Vishay Semiconductor Opto Division

Vishay Semiconductor Opto Division专注于光电子元件的设计和制造,提供广泛的光耦合器、红外接收器、光传感器和LED产品。其产品广泛应用于消费电子、汽车、工业和医疗设备中。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

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