ST STPSC8H065D

SiC（Silicon Carbide）Schottky650 V8A

Overview

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

This STPSC8H065D is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Features

Tube Package
an average rectified current of 8A volts
8A is the maximum value
the peak reverse is 80μA

Through Hole Mounting Type

Applications

There are a lot of STMicroelectronics
STPSC8H065D applications of single-phase diode rectifier.

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode