ST STPSC20H065CW

1 对共阴极650 V

Overview

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Features

Tube Package
1.75V forward voltage
a peak voltage of 100μA
a reverse voltage peak of 100μA

Through Hole Mounting Type

Applications

There are a lot of STMicroelectronics
STPSC20H065CW applications of rectifier diode array.

• Rectifier for drives applications
• Crowbar applications
• Rectifiers for UBS
• Battery chargers
• Rectifiers in switch mode power supplies (SMPS)
• Free wheeling diode in low voltage converters
• General Rectification