ST STN2580

NPN1 A400 V

Overview

This device is a high voltage fast-switching NPN power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 60 @ 250mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 9V

Surface Mount Mounting Type

Applications

There are a lot of STMicroelectronics
STN2580 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting