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STL65DN3LLH5

ST STL65DN3LLH5

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)30V65A6.5 毫欧 @ 9.5A,10V1.5V @ 250µA

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STL65DN3LLH5
MOSFET 2N-CH 30V 65A POWERFLAT
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¥4.65

价格更新:一个月前

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产品详情

Overview

STL-6-450-8-01 with pin details, that includes Natural Color, they are designed to operate with a Polyamide (PA66), Nylon 6/6 Material, Series is shown on datasheet note for use in a TWIST-LOK, that offers Type features such as Clip, Twist Lock, Packaging is designed to work in Bulk, as well as the 1.591" (40.41mm) Height, the device can also be used as Arrowhead, Winged Mounting Type. In addition, the Material Flammability Rating is UL94 V-2, the device is offered in 0.236" (5.99mm) Panel Hole Size, the device has a Standoff of Type Attributes, and Opening Size is 0.402" ~ 0.500" (10.21mm ~ 12.70mm).

STL656AD with circuit diagram manufactured by ST. The STL656AD is available in SOP8 Package, is part of the IC Chips.

Features

STripFET™ V Series


■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses


PowerFlat™ (5x6) Supplier Device Package

Applications


Switching applications

 

 

 




 


产品属性
全选
型号系列: STripFET™ V
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 30V
25°C 时电流 - 连续漏极 (Id): 65A
漏极电流和栅极至源极电压下的最大导通电阻: 6.5 毫欧 @ 9.5A,10V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 12nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 1500pF @ 25V
最大功率: 60W
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-PowerVDFN
供应商器件封装: PowerFlat™(5x6)
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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