ST STGW60V60F

600 V80 A750µJ（开），550µJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• Tail-less switching off

• VCE(sat) = 1.85 V (typ.) @ IC = 60 A

• Tight parameter distribution

• Safe paralleling

• Low thermal resistance

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters