ST LET9150

LDMOS860MHz20dB32 V20A600 mA150W

Overview

The LET9120 is RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz, that includes LET9120 Series, they are designed to operate with a RF Power MOSFET Type, Packaging is shown on datasheet note for use in a Bulk, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in M246, as well as the Si Technology, the device can also be used as 18 dB at 860 MHz Gain. In addition, the Output Power is 120 W, the device is offered in 200 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and Operating Frequency is 1.6 GHz, and the Vgs Gate Source Voltage is 15 V, and Id Continuous Drain Current is 18 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Transistor Polarity is N-Channel.

The LET9070FB is RF MOSFET Transistors 70W 28V HF to 2GHz LDMOS TRANSISTOR, that includes LET9070FB Series, they are designed to operate with a Si Technology, Type is shown on datasheet note for use in a RF Power MOSFET.

Features

Box Package
LDMOS Technology
860MHz Frequency
20dB Gain
32 V Voltage - Test
20A Current Rating (Amps)
600 mA Current - Test
150W Power - Output
80 V Voltage - Rated
M246 Package / Case
M246 Supplier Device Package