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L6386ADTR

ST L6386ADTR

半桥217V(最大)

比较
L6386ADTR
IC GATE DRVR HALF-BRIDGE 14SO
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¥19.40

价格更新:一个月前

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产品详情

Overview

The L6386ADTR is a high voltage gate driver, manufactured with the BCD? “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half-bridge configurations.

The L6386ADTR device provides two input pins, two output pins and an enable pin (SD), and guarantees the outputs switch in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The L6386ADTR integrates a comparator (inverting input internally referenced to 0.5 V) that can be used to protect the device against fault events, like overcurrent. The DIAG output is a diagnostic pin, driven by the comparator, and used to signal a fault event occurrence to the controlling device. The bootstrap diode is integrated in the driver allowing a more compact and reliable solution. The L6386ADTR device features the UVLO protection on both supply voltages (VCC and VBOOT) ensuring greater protection against voltage drops on the supply lines. The device is available in a SO-14 package, in tube, and tape and reel packaging.

Features

Tape & Reel (TR) Package
Embedded in the Cut Tape (CT) package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 750mW

Surface Mount Mounting Type

Applications


There are a lot of STMicroelectronics
L6386ADTR gate drivers applications.

  • Video amplifiers
  • PCMCIA applications
  • A/D drivers
  • Line drivers
  • Portable computers
  • High-speed communications
  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
可编程: 未验证
驱动配置: 半桥
通道类型: 独立式
驱动器数: 2
栅极类型: IGBT,N 沟道 MOSFET
电源电压: 17V(最大)
逻辑低电平和高电平的电压电平: 1.5V,3.6V
电流 - 峰值输出(灌入,拉出): 400mA,650mA
输入类型: 反相
最大高压侧电压(自启动): 600 V
上升/下降时间(典型值): 50ns,30ns
工作温度: -40°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商器件封装: 14-SO
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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