Skyworks CME7660-000

肖特基 - 单2V100 mA0.15pF @ 0V，1MHz75 mW-55°C ~ 150°C（TA）

Overview

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.

Features

Bulk Package
2V Voltage - Peak Reverse (Max)
100 mA Current - Max
0.15pF @ 0V, 1MHz Capacitance @ Vr, F
75 mW Power Dissipation (Max)
Die Package / Case
Die Supplier Device Package