Silicon Labs SI823H9BC-IS

容性耦合13750Vrms

Overview

Our Si823H1BB-IS1 isolated gate drivers offer very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over a wide operating temperature range of -40 to 125 °C. It offers critical safety features such as dead time programmability, driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H1BB-IS1 isolators are offered in a High Side / Low Side configuration.

Features

Si823Hx Series
Tube Package
Capacitive Coupling Technology
1 Number of Channels
3750Vrms Voltage - Isolation
125kV/µs Common Mode Transient Immunity (Min)
30ns, 30ns Propagation Delay tpLH / tpHL (Max)
5ns Pulse Width Distortion (Max)
12ns, 12ns (Max) Rise / Fall Time (Typ)
4A, 4A Current - Output High, Low
6A Current - Peak Output
5.5V ~ 30V Voltage - Output Supply
Surface Mount Mounting Type
CQC, CSA, UL, VDE Approval Agency